Ferrotronics for novel data storage and neuromorphic applications

We are seeking two outstanding candidates for PhD scholarships for cutting-edge projects, funded by the Australian Research Council’s (ARC) Discovery Program, entailing the development of ferroelectric (multiferroic) thin films and polar nanostructures for novel electronic, sensing and neuromorphic applications.

Ferroelectric (multiferroics) akin to magnets exhibit a corresponding electrical property known as permanent electric polarization, which stems from electric dipoles featuring equal but oppositely charged ends or poles. The polarization can be repeatedly altered between two or more equivalent states or directions when subjected to an external electric field. The switchable polar materials thus are under active consideration for numerous technological applications including fast nano-electronic computer memory and low-energy electronic and sensing devices. The functionality of ferroic materials (oxides and van der Waals materials) at its core is driven by a range of spatially complex, real-space topological polar configurations, which provides a fertile ground for exploring emergent electronic phenomena and exotic phases in condensed matter physics. The projects will make use of a range of experimental material and device characterization techniques including state-of-the-art scanning probe microscopy/spectroscopy, as well as electrical characterization techniques, to unveil emergent electronic properties and exotic polar nanostructures for low-energy electronics and sensing.

This exciting project is a partnership between Flinders University, UNSW Sydney, and the University of Nebraska, Lincoln, United States. The project has two funded PhD scholarships. Both will be based at Flinders University (Principal supervisor Dr Pankaj Sharma). Associate supervision, if suitable, will be provided by the other members of the research team located within Australia and the USA.  

Research articles published in this field in recent years include:

• Ferroelectric Domain Wall Memory and Logic, ACS Appl. Electron. Mater. 5, 4692 (2023)
• Wurtzite ferroelectrics, ACS Nano 17, 17148 (2023)
• Ferroelectric order in van der Waals (vdW) materials, Nature Review Materials 8, 25 (2023)
• Ferroelectric wall nanoelectronics. Advanced Functional Materials 32, 2110263, 2022
• Anisotropic electronic conduction in vdW ferroelectric CuInP2S6. Nano letters 21, 995, 2021.
• Superior polarization retention through wall pinning. Nature Communications 11, 1, 2020.
• Ferroelectric van der Waals semimetal. Science Advances 5, eaax5080, 2019
• Light and bias-induced structural deformation in halide perovskites. Nature Communications 10, 444, 2019.
• Non-volatile ferroelectric domain wall memory. Science Advances 3, e1700512, 2017.
• Hybrid MoS2–BaTiO3–SrRuO3 tunnel junctions. Nano Letters 17, 922, 2017.

The scholarship includes:

• a stipend  valued at $33,000* per annum tax-free
• The scholarship will be awarded for three years
• a Research Training Program Fee Offset Scholarship to cover tuition fees for Australian Citizens, NZ Citizens and Permanent Residents
• overseas students will be considered

To be eligible for the award of this scholarship a student must:

• Be an Australian citizen; or New Zealand citizen; or have been granted permanent resident status; or are international citizens; and
• meet PhD admission requirements including: have an Australian Honours degree Class 1 or 2A or equivalent qualification (at least AQF Level 8), including a research component of at least 6 months’ full-time study achieving Distinction (75%) OR including evidence of equivalent research experience, such as a substantial first-author refereed publication or track record as an investigator on a competitive grant; and
• be available to commence as a full-time PhD student at Flinders University in semester 1, 2025;